General Description
MEM2301XG Series P-channel enhancement modefield-effect transistor ,produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation,and low power dissipation in a very all outline surface mount package.
Features
-20V/-2.8A
RDS(ON) =93mΩ@ VGS=-4.5V,ID=-2.8A
RDS(ON) =113mΩ@ VGS=-2.5V,ID=-2A
High Density Cell Design For Ultra Low On-Resistance
Subminiature surface mount package:SOT23
Tical Application
Power management
Load switch
Battery protection
